Symposium E6. Materials for Si/Ge Based Electronics

The symposium will include not only the group IV materials itself but also contact and interconnect materials, such as silicides and germanides, used in conjunction with the Si and Ge based devices.

Since both Si and Ge are semiconductors with different energy band gaps and carrier mobilities, their alloys allow tailoring of electronic and the optoelectronic properties that determine the suitability for a specific application. SiGe & related materials are now being broadly employed in CMOS, optoelectronics, solar cells, sensors, and a variety of other areas. For the 45nm node and beyond, the use of the strained SiGe in PMOSFET S/D regions is one of the most important strain engineering technologies to boost device performances.

Metal silicide or germanide nanowires with complex phase behavior are potentially useful in a variety of fields. The methods used to grow metal silicide or germanide nanowires with different phases and the properties of these nanowires are continuing to be explored.

Interconnects are essential elements that transmit signals and power in microelectronic integrated circuits.  Three-dimensional interconnect is one of the key technologies for highly compacted Si-based integrated circuits.  Interconnect technology also makes it possible to monolithically integrate microelectromechanical system (MEMS) with Si-based integrated circuits. 

In addition, with nearly perfect lattice match between Ge and GaAs, growth of Ge (or SiGe with high Ge content) on Si also serves as a stepping stone for III-V device integration on the Si.

1.   Device-related materials
2.   Epitaxy and Processing
3.   Strain Engineering
4.   Germanium and Related Compounds
5.   Electronic, Optoelectronic, and Photonic Devices
6.   Emerging Applications
7.  Silicides and Germanide Formation and Processing
8.  Silicides or Germanide wire formation, propertied, and applications
9.  3D interconnect, Through-Si-Via (TSV) etching, barrier deposition, electroplating processes
10. Advanced interconnect concepts, options and issues for post –SiCMOS devices
11. Interconnect reliability: Metal electromigration and stress voiding, Dielectric integrity and mechanical stability
12. Interconnects for novel non-volatile, embedded memories (PCM, resistive, etc.)
13. Interconnect/metallization issues in MEMs and bio devices

Abstracts should be submitted electronically through website of IUMRS-ICA 2011, and questions and inquiries should be sent to the symposium organizers.

Prof. Chien-Neng Liao(廖建能): cnliao@mx.nthu.edu.tw
Department of Materials Science and Engineering, National Tsing Hua University, Taiwan.
Prof. Cho-Jen Tsai(蔡哲正): cjtsai@mx.nthu.edu.tw
Department of Materials Science and Engineering, National Tsing Hua University, Taiwan.
Prof. Sheng-Wei Lee(李勝偉): schon0911@gmail.com
Institute of Materials Science and Engineering, National Central University, Taiwan

Prof. Kazuhiro ITO: kazuhiro-ito@mtl.kyoto-u.ac.jp
Department of Materials Science and Engineering,

Kyoto University, Japan
Prof. Chee Lip GAN(顏至勵): CLGAN@ntu.edu.sg
Division of Materials Science, School of Materials Science & Engineering
Nanyang Technological University, Singapore

Prof. Zuimin Jiang (蒋最敏):zmjiang@fudan.edu.cn

Department of Physics, Fudan University, China

E1.Oxide /nitride for electronic applications

E2. Ferroelectric, Piezoelectric, and Dielectric Materials

E3. Optoelectronic /Photonic Related Materials

E4. Organic, Molecular, and Flexible Electronics

E5. Compound Semiconductor Materials

E6. Materials for Si/Ge Based Electronics

E7. Materials for Emerging Packaging and Interconnect Technologies